ECH8601M-TL-H n-channel power mosfet 24v, 8a, 23m , dual ech8 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. features ? low on-resistance ? built-in gate protection resistor ? 2.5v drive ? best suited for lib charging and discharging switch ? common-drain type ? halogen free compliance ? protection diode in speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 24 v gate-to-source voltage v gss 12 v drain current (dc) i d 8a drain current (pulse) i dp pw 10 s, duty cycle 1% 60 a allowable power dissipation p d when mounted on ceramic substrate (1000mm 2 0.8mm) 1unit 1.5 w total dissipation p t when mounted on ceramic substrate (1000mm 2 0.8mm) 1.6 w channel temperature tch 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7011a-003 product & package information ? package : ech8 ? jeita, jedec : - ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection 8765 1234 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain 6 : drain 7 : drain 8 : drain ech8 1 4 85 0.15 0 to 0.02 0.25 0.25 2.8 2.3 0.65 2.9 0.3 0.9 0.07 top view bottom view tl ECH8601M-TL-H tl lot no. s m d ty p e mosfets mos mosfets mos
electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 24 v zero-gate voltage drain current i dss v ds =20v, v gs =0v 1 a gate-to-source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 0.5 1.3 v forward transfer admittance | yfs | v ds =10v, i d =4a 3.1 5.3 s static drain-to-source on-state resistance r ds (on)1 i d =4a, v gs =4.5v 13.5 17 23 m r ds (on)2 i d =4a, v gs =4.0v 14 18 24 m r ds (on)3 i d =4a, v gs =3.1v 14.5 20 30 m r ds (on)4 i d =2a, v gs =2.5v 16 24 35 m turn-on delay time t d (on) see speci ed test circuit. 300 ns rise time t r 1000 ns turn-off delay time t d (off) 3000 ns fall time t f 1800 ns total gate charge qg v ds =10v, v gs =4.5v, i d =8a 7.5 nc gate-to-source charge qgs 1.5 nc gate-to-drain ?miller? charge qgd 2.0 nc diode forward voltage v sd i s =8a, v gs =0v 0.8 1.2 v switching time test circuit ordering information device package shipping memo ECH8601M-TL-H ech8 3,000pcs./reel pb free and halogen free pw=10 s d.c. 1% p. g 50 rg rg=1k g s d i d =4a r l =2.5 v dd =10v v out ech8601m v in 4v 0v v in s m d ty p e mosfets mos mosfets mos
gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a 1 2 3 4 5 6 7 8 9 0 0.5 1.0 1.5 2.0 2.5 0 it13573 v ds =10v --25 c ta=75 c 25 c drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a 0 0 1 2 3 4 5 6 7 8 9 10 0.2 0.3 0.5 0.1 0.4 it13805 v gs =1.5v 2.5v 4.0v 10.0v 3.1v 4.5v gate-to-source voltage, v gs -- v r ds (on) -- v gs drain current, i d -- a diode forward voltage, v sd -- v source current, i s -- a i s -- v sd static drain-to-source on-state resistance, r ds (on) -- m 0.1 1.0 1.0 2 7 5 3 2 10 10 7 5 3 27 5 3 2 75 c ta= --25 c it13575 v ds =10v it13576 0.1 0.2 0.3 0.5 0.7 0.4 0.6 0.8 0.9 1.0 0.001 0.01 0.1 7 5 3 2 7 5 3 2 1.0 7 5 3 2 7 5 3 10 2 v gs =0v ta=75 c 25 c --25 c 0 5 10 2 15 4 20 30 25 35 6 40 810 ta=25 c i d =2a it13574 25 c 4a drain current, i d -- a sw time -- i d switching time, sw time -- ns total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v ambient temperature, ta -- c r ds (on) -- ta static drain-to-source on-state resistance, r ds (on) -- m 0.1 1.0 23 57 23 57 10 7 5 3 2 1000 100 7 5 3 2 t d (on) it13857 t d (off) t f v dd =10v v gs =4.5v t r 012345 8 7 6 0 4.0 4.5 2.5 3.5 3.0 1.5 2.0 0.5 1.0 v ds =10v i d =8a it13858 it13856 --60 --40 --20 0 20 40 60 80 100 140 120 160 5 10 20 15 25 30 35 40 45 v gs =3.1v, i d =4.0a v gs =2.5v, i d =2.0a v gs =4.5v, i d =4.0a v gs =4.0v, i d =4.0a forward transfer admittance, | y fs | -- s | y fs | -- i d s m d ty p e mosfets mos mosfets mos
ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w 0 0 20 40 0.6 1.0 1.4 1.5 1.8 0.4 0.2 0.8 1.2 1.6 60 80 100 120 140 160 it13722 total dissipation 1unit when mounted on ceramic substrate (1000mm 2 ? 0.8mm) a s o drain-to-source voltage, v ds -- v drain current, i d -- a it13721 2 2 3 5 7 0.1 2 3 5 7 1.0 0.01 0.01 0.1 57 23 2 1.0 57 32 10 57 33 25 operation in this area is limited by r ds (on). 100 s 100ms dc operation 10ms 1ms 2 3 5 7 3 2 5 7 10 100 i dp =60a i d =8a pw 10 s ta=25 c single pulse when mounted on ceramic substrate (1000mm 2 ? 0.8mm) 1unit s m d ty p e mosfets mos mosfets mos
outline drawing land pattern example ECH8601M-TL-H mass (g) unit 0.02 * for reference mm unit: mm 0.4 0.6 2.8 0.65 s m d ty p e mosfets mos mosfets mos
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